| 1. | The screen - space coordinate of the left guard band clipping region
左保护带剪辑区域的屏幕空间坐标。
|
| 2. | The screen - space coordinate of the bottom guard band clipping region
底部保护带剪辑区域的屏幕空间坐标。
|
| 3. | The bottom guard band clipping region is the region outside of the viewport range in which the device can accept screen coordinates ; because the device can accept triangles that are partially or totally off - screen and within the guard band clipping region , the frequency of cpu - intensive clipping calculations can be reduced
底部保护带剪辑区域是视区范围外的一个区域，在此区域设备可接受屏幕坐标；因为设备可以接受部分离屏或全部离屏但处于保护带剪辑区域的三角形，所以，可以减少大量占用cpu的剪辑计算的发生频率。
|
| 4. | A right guard clipping region is the region outside of the viewport range in which the device can accept screen coordinates ; because the device can accept triangles that are partially or totally off - screen and within the guard band clipping region , the frequency of cpu - intensive clipping calculations can be reduced
右保护带剪辑区域是视区范围外的一个区域，在此区域设备可接受屏幕坐标；因为设备可以接受部分离屏或全部离屏但处于保护带剪辑区域的三角形，所以，可以减少大量占用cpu的剪辑计算的发生频率。
|
| 5. | The left guard clipping region is the outside of the viewport range in which the device can accept screen coordinates ; because the device can accept triangles that are partially or totally off - screen and within the guard band clipping region , the frequency of cpu - intensive clipping calculations can be reduced
左保护带剪辑区域是视区范围外的一个区域，在此区域设备可接受屏幕坐标；因为设备可以接受部分离屏或全部离屏但处于保护带剪辑区域的三角形，所以，可以减少大量占用cpu的剪辑计算的发生频率。
|
| 6. | Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ) . in this paper , some means to harden the devices against these phenomena are used . guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup
在本文设计中，采用双环保护结构，大大的降低了cmos集成电路对单粒子闩锁效应的敏感性；对nmos管采用环型栅结构代替传统的双边器件结构，消除了辐射感生边缘寄生晶体管漏电效应；采用附加晶体管的冗余锁存结构，减轻了单粒子翻转效应的影响。
|
您当前位置：